BUK7619-100B NXP Semiconductors, BUK7619-100B Datasheet
BUK7619-100B
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BUK7619-100B Summary of contents
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... BUK7619-100B N-channel TrenchMOS standard level FET Rev. 01 — 10 October 2007 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I TrenchMOS technology I 175 C rated 1.3 Applications I Automotive systems ...
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... pulsed unclamped inductive load 100 Figure 16. of 175 C. j(max) Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET Min Max - - - Figure 2 and 3 - Figure see Figure ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7619-100B_1 Product data sheet 03na19 150 200 Fig 2. Continuous drain current as a function Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET ( 100 150 V ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7619-100B_1 Product data sheet N-channel TrenchMOS standard level FET Conditions mounted on a printed-circuit board; minimum footprint - Rev. 01 — 10 October 2007 BUK7619-100B Min Typ Max - - 0. 003aab144 ...
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... GS DS see Figure 1 see Figure /dt = 100 Rev. 01 — 10 October 2007 BUK7619-100B Min Typ Max 100 - - 4 500 - 2 100 and 8 - ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aac045 6 160 200 I (A) D Fig 8. Normalized drain-source on-state resistance Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET gate-source voltage; typical values 2 ...
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... C) j Fig 10. Sub-threshold drain current as a function of 003aac039 4000 C (pF) 3000 2000 1000 (A) D Fig 12. Input, output and reverse transfer capacitances Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET 1 min typ max ...
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... GS Fig 14. Gate-source voltage as a function of gate 003aac042 1.0 1.5 V (V) SD (1) Single-pulse; T (2) Single-pulse; T (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET ( ( ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2007. All rights reserved. SOT404 05-02-11 06-03- ...
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... BUK7619-100B_1 Product data sheet 1.50 2.25 2.15 8.35 8.15 1.50 4.60 0.30 4.85 7.95 3.00 solder lands solder resist occupied area solder paste Data sheet status Product data sheet Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET 10.85 10.60 10.50 7.50 7.40 1.70 5.40 0.20 1.20 1.30 1.55 5.08 msd057 Change notice Supersedes - - © NXP B.V. 2007. All rights reserved. 8.275 8.075 ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 10 October 2007 BUK7619-100B N-channel TrenchMOS standard level FET © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK7619-100B_1 All rights reserved. Date of release: 10 October 2007 ...