BUK7619-100B NXP Semiconductors, BUK7619-100B Datasheet - Page 4

• Manufacturer Part Number: BUK7619-100B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4.
BUK7619-100B_1
Product data sheet
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
-1
-2
-3
1
10
-6
0.05
0.02
0.1
Thermal characteristics
0.2
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
single shot
= 0.5
10
-5
10
-4
Conditions
mounted on a printed-circuit board;
minimum footprint
Rev. 01 — 10 October 2007
10
-3
N-channel TrenchMOS standard level FET
10
-2
BUK7619-100B
10
P
Min
-
-
-1
t
p
T
t
p
Typ
-
50
© NXP B.V. 2007. All rights reserved.
(s)
003aab144
=
T
t
p
t
Max
0.74
-
1
4 of 12
Unit
K/W
K/W