BUK7619-100B NXP Semiconductors, BUK7619-100B Datasheet - Page 6

• Manufacturer Part Number: BUK7619-100B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7619-100B_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
(A)
R
(m )
I
D
DSon
200
150
100
50
40
30
20
10
50
0
0
T
function of drain-source voltage; typical values
T
of drain current; typical values
j
0
j
0
= 25 C
= 25 C
V
GS
(V) = 5
40
2
5.5
80
4
6
10
120
6
15
V
6.5
GS
160
(V) = 20V
10
20
8
003aac045
003aac043
V
8
I
D
DS
(A)
6
5.5
5
4.5
(V)
8
7
200
Rev. 01 — 10 October 2007
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
2.8
2.1
1.4
0.7
a
30
25
20
15
10
0
T
of gate-source voltage; typical values
-60
factor as a function of junction temperature
a
0
j
= 25 C; I
=
N-channel TrenchMOS standard level FET
----------------------------- -
R
DSon 25 C
R
DSon
D
5
0
= 10 A
BUK7619-100B
10
60
120
15
© NXP B.V. 2007. All rights reserved.
V
003aac044
T
GS
j
03ng41
( C)
(V)
180
20
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