BUK7640-100A NXP Semiconductors, BUK7640-100A Datasheet - Page 3

• Manufacturer Part Number: BUK7640-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7640-100A
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
(A)
100
10
10
I
D
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
R
DS(on)
= 25 °C; I
= V
50
DS
/ I
10
DM
D
DC
is single pulse
100
10
tp = 1 μs
10 μs
100 μs
1 ms
10 ms
100 ms
2
150
V
All information provided in this document is subject to legal disclaimers.
DS
T
mb
003aaf471
003aaf587
(V)
(°C)
200
10
Rev. 2 — 20 April 2011
3
Fig 2.
Fig 4.
W
(%)
(%)
I
DSS
D
100
100
80
60
40
20
80
60
40
20
0
0
function of mounting base temperature
20
avalanche energy as a function of
mounting-base temperature
V
Normalized continuous drain current as a
I
Normalised drain-source non-repetitive
0
D
GS
N-channel TrenchMOS standard level FET
= 75 A
≥ 10 V
50
60
BUK7640-100A
100
100
150
140
© NXP B.V. 2011. All rights reserved.
T
T
mb
mb
003aaf586
003aaf600
(°C)
(°C)
200
180
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