BUK7640-100A NXP Semiconductors, BUK7640-100A Datasheet - Page 4

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7640-100A

Manufacturer Part Number
BUK7640-100A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
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5. Thermal characteristics
Table 5.
BUK7640-100A
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
l
(A)
AV
10
10
10
10
10
10
−1
−2
−3
1
1
2
10
10
−3
−7
All information provided in this document is subject to legal disclaimers.
T
δ
0.05
0.02
j
0.2
0.1
= 0.5
prior to avalanche = 150 °C
0
10
Conditions
minimum footprint; FR4 board
10
Rev. 2 — 20 April 2011
−2
−5
10
10
−1
−3
P
t
10
p
1
−1
T
25 °C
t
AV
N-channel TrenchMOS standard level FET
003aaf601
003aaf588
t (s)
δ =
(ms)
T
t
t
p
10
10
BUK7640-100A
Min
-
-
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
1.1
-
Unit
K/W
K/W
4 of 12

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