BUK764R0-55B NXP Semiconductors, BUK764R0-55B Datasheet - Page 3
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK764R0-55B
Manufacturer Part Number
BUK764R0-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK764R0-55B.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK764R0-55B
Manufacturer:
NXP
Quantity:
81 000
Company:
Part Number:
BUK764R0-55B
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
[7]
BUK764R0-55B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
see
D
j
mb
mb
mb
mb
mb
Rev. 5 — 22 April 2011
GS
GS
≥ 25 °C; T
= 75 A; V
Figure 4
Figure 4
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
p
≤ 10 µs; T
sup
j
≤ 175 °C
j(init)
GS
≤ 55 V; R
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
p
= 25 °C
≤ 10 µs;
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Figure
Figure 1
1;
BUK764R0-55B
[4][5][6][
[2][3]
[2][1]
[1]
[1]
[1]
7]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
175
175
Max
55
55
20
75
193
75
774
300
193
75
774
1.2
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
J
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