BUK764R0-55B NXP Semiconductors, BUK764R0-55B Datasheet - Page 9
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK764R0-55B
Manufacturer Part Number
BUK764R0-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK764R0-55B.pdf
(14 pages)
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NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
7000
6000
5000
4000
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
-1
1
10
C
C
C
oss
iss
rss
V
All information provided in this document is subject to legal disclaimers.
DS
(V)
03nh24
10
2
Rev. 5 — 22 April 2011
Fig 15. Reverse diode current as a function of reverse
(A)
I
D
100
80
60
40
20
0
diode voltage; typical values
0.0
N-channel TrenchMOS standard level FET
0.2
BUK764R0-55B
0.4
T
j
= 175 °C
0.6
© NXP B.V. 2011. All rights reserved.
0.8
T
j
V
= 25 °C
03nh17
SD
(V)
1.0
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