BUK9MRR-65PKK NXP Semiconductors, BUK9MRR-65PKK Datasheet - Page 10

• Manufacturer Part Number: BUK9MRR-65PKK
• Description: Dual N-channel enhancement mode field-effect power transistor in SO20
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9MRR-65PKK
Product data sheet
Fig 11. Transfer characteristics; drain current as a
Fig 13. Sub-threshold drain current as a function of
(A)
(A)
I
I
D
D
10
10
10
10
10
10
50
40
30
20
10
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage; typical values,
FET1 and FET2
gate-source voltage, FET1 and FET2
0
0
2
25 C
1
min
4
typ
6
T
j
2
= 150 C
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
001aam030
003a a d904
V
GS
(V)
(V)
10
3
Rev. 02 — 17 June 2010
Fig 12. Output characteristics: drain current as a
Fig 14. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0
0
−60
function of drain-source voltage; typical
values,FET1 and FET2
junction temperature, FET1 and FET2
0
Dual TrenchPLUS FET Logic Level FET
2
BUK9MRR-65PKK
0
4
60
max
min
typ
6
10 V
120
V
© NXP B.V. 2010. All rights reserved.
GS
8
001aam029
003aad895
(V) =2.5 V
T
V
j
DS
(°C)
3.5 V
4.0 V
5.0 V
4.5 V
3.0 V
(V)
180
10
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