BUK9MRR-65PKK NXP Semiconductors, BUK9MRR-65PKK Datasheet - Page 8

Dual N-channel enhancement mode field-effect power transistor in SO20

BUK9MRR-65PKK

Manufacturer Part Number
BUK9MRR-65PKK
Description
Dual N-channel enhancement mode field-effect power transistor in SO20
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Characteristics
Table 6.
BUK9MRR-65PKK
Product data sheet
Symbol
FET1 and FET2 static characteristics
V
V
I
I
R
I
S
V
FET1 and FET2 dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
DSS
GSS
D
d(on)
r
d(off)
f
D
(BR)DSS
GSth
F(TSD)
F(TSD)
DSon
iss
oss
rss
/I
G(tot)
GS
GD
sense
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
ratio of drain current to
sense current
temperature sense
diode temperature
coefficient
temperature sense
diode forward voltage
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
see
V
see
V
see
V
see
V
I
see
I
see
I
see
V
T
V
R
V
R
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
F
F
D
j
from pin to center of die
DS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
G(ext)
= 250 µA; 25 °C ≤ T
= 250 µA; T
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 5 A; V
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure 18
Figure 18
Figure 19
= 52 V; V
= 52 V; V
= 0 V; V
= 30 V; R
= 30 V; R
= 4.5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 5 V; T
= 0 V; V
= 10 Ω
= 10 Ω
Rev. 02 — 17 June 2010
DS
13; see
13; see
13; see
15; see
16; see
16; see
16; see
D
D
DS
DS
DS
j
GS
DS
D
= 25 °C; see
D
= 3 A; T
= 3 A; T
= 52 V; V
GS
GS
L
L
j
GS
GS
= 3 A; T
= 25 °C;
= V
= V
= V
= 3 A; T
Figure 20
= 6 Ω; V
= 3 Ω; V
= 15 V; T
= 25 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 14
Figure 14
Figure 14
Figure 16
Figure 15
Figure 15
Figure 15
; T
; T
; T
j
j
j
= 25 °C;
= 150 °C;
j
GS
≤ 150 °C;
j
= 25 °C;
GS
GS
j
j
j
= 25 °C;
j
j
j
= 25 °C;
= 150 °C;
= -55 °C;
j
j
= 25 °C
= 150 °C
= 25 °C
= 5 V;
= 25 °C
= -55 °C
Figure 17
= 5 V;
= 5 V;
Dual TrenchPLUS FET Logic Level FET
BUK9MRR-65PKK
Min
65
59
1
0.5
-
-
-
-
-
-
-
-
1766
-5.4
2.855
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.02
-
2
-
57
-
-
1962
-5.7
2.9
8.8
1.9
3.27
712
106
35
18
22
57
48
0.9
© NXP B.V. 2010. All rights reserved.
-
-
Max
-
-
2
-
2.3
3
125
300
74.6
67
137.4
60.7
2158
-6
2.945
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
mΩ
mΩ
A/A
mV/K
V
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
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