BUK9Y11-30B NXP Semiconductors, BUK9Y11-30B Datasheet
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology](/photos/41/53/415320/sot669_3d_sml.gif)
BUK9Y11-30B
Available stocks
Related parts for BUK9Y11-30B
BUK9Y11-30B Summary of contents
Page 1
... BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 C rated 1.3 Applications I Automotive systems ...
Page 2
... pulsed unclamped inductive load Figure 16. of 175 C. j(max) Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET Min Max - - - Figure 2 and 3 - Figure see Figure +175 55 +175 - 10 s ...
Page 3
... Fig 2. Continuous drain current as a function of mounting base temperature Limit DSon Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET 003aaa846 0 50 100 150 003aaa847 100 ...
Page 4
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9Y11-30B_1 Product data sheet Conditions - Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET Min Typ Max - - 2 003aaa848 ...
Page 5
... Figure 2 see Figure /dt = 100 Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET Min Typ Max and 10 1.1 1 2 500 ...
Page 6
... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab406 3 120 160 I (A) D Fig 8. Normalized drain-source on-state resistance Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET gate-source voltage; typical values ...
Page 7
... Fig 10. Sub-threshold drain current as a function of 003aab409 (pF (A) D Fig 12. Input, output and reverse transfer capacitances Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET min typ max ...
Page 8
... V (V) GS Fig 14. Gate-source voltage as a function of gate 003aab403 0.6 0.8 1.0 V (V) SD (1) Single-pulse; T (2) Single-pulse; T (3) Repetitive. Fig 16. Single-pulse and repetitive avalanche rating; Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET ...
Page 9
... 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION SOT669 ...
Page 10
... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date BUK9Y11-30B_1 20070830 BUK9Y11-30B_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 30 August 2007 BUK9Y11-30B Supersedes - © NXP B.V. 2007. All rights reserved ...
Page 11
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 30 August 2007 BUK9Y11-30B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2007. All rights reserved ...
Page 12
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 August 2007 Document identifier: BUK9Y11-30B_1 ...