BUK9Y11-30B NXP Semiconductors, BUK9Y11-30B Datasheet - Page 7

• Manufacturer Part Number: BUK9Y11-30B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y11-30B_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
(S)
g
fs
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
I
junction temperature
T
drain current; typical values
D
60
5
j
= 1 mA; V
= 25 C; V
10
0
DS
DS
= V
= 25 V
GS
15
60
max
min
typ
20
120
25
003aab986
T
003aab409
j
I
( C)
D
(A)
180
Rev. 01 — 30 August 2007
30
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
(pF)
I
10
10
10
10
10
10
2500
2000
1500
1000
D
C
500
1
2
3
4
5
6
0
T
gate-source voltage
10
V
as a function of drain-source voltage; typical
values
0
j
GS
= 25 C; V
1
= 0 V; f = 1 MHz
N-channel TrenchMOS logic level FET
DS
min
= V
1
1
GS
C
C
C
oss
rss
iss
BUK9Y11-30B
typ
2
10
max
V
© NXP B.V. 2007. All rights reserved.
V
GS
DS
003aab987
003aab402
(V)
(V)
10
3
2
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