BUK9Y11-30B NXP Semiconductors, BUK9Y11-30B Datasheet - Page 4

• Manufacturer Part Number: BUK9Y11-30B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4:
BUK9Y11-30B_1
Product data sheet
Symbol
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
-6
0.05
0.1
0.02
0.2
Thermal characteristics
Parameter
thermal resistance from junction to mounting base -
= 0.5
single shot
10
-5
10
-4
Rev. 01 — 30 August 2007
10
-3
Conditions
10
N-channel TrenchMOS logic level FET
-2
BUK9Y11-30B
10
P
Min
-
-1
t
p
T
Typ
-
t
© NXP B.V. 2007. All rights reserved.
p
(s)
003aaa848
=
T
t
p
t
Max
2
1
4 of 12
Unit
K/W