BUK9Y14-40B NXP Semiconductors, BUK9Y14-40B Datasheet - Page 2

• Manufacturer Part Number: BUK9Y14-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BUK9Y14-40B_3
Product data sheet
Pin
1, 2, 3
4
mb
Type number
BUK9Y14-40B
Symbol Parameter
V
V
I
I
P
T
T
Avalanche ruggedness
E
E
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
GS
tot
DS(AL)S
DS(AL)R
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
source current
peak source current
Pinning
Symbol
S
G
D
Ordering information
Limiting values
Package
Name
LFPAK
Description
source
gate
mounting base;
connected to drain
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Conditions
T
T
T
T
T
I
T
see
T
t
D
p
j
mb
mb
mb
mb
j(init)
mb
≤ 10 μs; pulsed; T
≥ 25 °C; T
= 56 A; V
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; unclamped
sup
j
≤ 175 °C
Rev. 03 — 2 June 2008
p
GS
≤ 40 V; R
≤ 10 μs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω; V
Figure 4
SOT669 (LFPAK)
Figure 1
1 2 3 4
Figure 4
GS
and
mb
= 5 V;
N-channel TrenchMOS logic level FET
1
[1][2]
[3]
BUK9Y14-40B
-55
Min
-
15
-
-
-
-
-55
-
-
-
-
Graphic symbol
Max
40
15
56
40
226
85
175
175
89
-
56
226
mbb076
G
© NXP B.V. 2008. All rights reserved.
D
S
Version
SOT669
Unit
V
V
A
A
A
W
°C
°C
mJ
J
A
A
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