BUK9Y14-40B NXP Semiconductors, BUK9Y14-40B Datasheet - Page 8

• Manufacturer Part Number: BUK9Y14-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y14-40B_3
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
T
V
charge; typical values
0
GS
j
= 25 °C; I
= 0V
5
D
V
DS
= 10 A
= 14 V
10
15
V
(A)
I
DS
S
50
40
30
20
10
0
= 32 V
0.0
20
003aab412
Q
G
(nC)
0.2
25
Rev. 03 — 2 June 2008
0.4
T
T
j
j
= 175 °C
= 25 °C
Fig 15. Input, output and reverse transfer capacitances
0.6
(pF)
2500
2000
1500
1000
C
500
0
10
V
as a function of drain-source voltage; typical
values
GS
0.8
−1
003aab411
V
= 0V ; f = 1 M H z
SD
(V)
N-channel TrenchMOS logic level FET
1.0
1
C
C
C
iss
oss
rss
BUK9Y14-40B
10
V
© NXP B.V. 2008. All rights reserved.
DS
003aab410
(V)
10
2
8 of 12