BUK9Y14-40B NXP Semiconductors, BUK9Y14-40B Datasheet - Page 6

• Manufacturer Part Number: BUK9Y14-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y14-40B_3
Product data sheet
Fig 6. Output characteristics: drain current as a
Fig 8. Forward transconductance as a function of
(A)
g
(S)
I
D
fs
160
120
80
40
50
45
40
35
30
0
T
T
function of drain-source voltage; typical values
drain current; typical values
0
5
j
j
= 25 °C
= 25 °C;V
15
10
2
6
DS
= 25V
15
4
5
20
6
V
GS
25
8
003aab413
(V) = 2.2
003aab417
V
I
DS
D
(A)
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
(V)
30
10
Rev. 03 — 2 June 2008
Fig 7. Drain-source on-state resistance as a function
Fig 9. Transfer characteristics: drain current as a
R
(mΩ)
DSon
(A)
I
D
15
12
50
40
30
20
10
9
6
0
T
V
of gate-source voltage; typical values
function of gate-source voltage; typical values
3
0
DS
j
= 25 °C; I
= 25V
N-channel TrenchMOS logic level FET
D
1
T
= 20 A
j
= 175 °C
7
BUK9Y14-40B
2
T
j
= 25 °C
11
3
V
© NXP B.V. 2008. All rights reserved.
GS
V
003aab415
003aab416
GS
(V)
(V)
15
4
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