2N7002BKM NXP Semiconductors, 2N7002BKM Datasheet
2N7002BKM
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2N7002BKM Summary of contents
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... V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ...
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... amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Simplified outline Graphic symbol Transparent top view Marking code Z8 Min - - [ ° ...
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... T amb electrostatic discharge human body model voltage 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Min = 25 °C [ −55 − °C [1] - [3] - 120 ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET 017aaa108 (1) (2) (3) (4) (5) ( (V) ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BKM Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET 017aaa109 (s) p 017aaa110 2 10 ...
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... GS turn-off delay time R G fall time source-drain voltage I S ≤ 300 μs; δ ≤ 0.01. p All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Min = 10 μ 250 μ 1 ...
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... V 2.75 V 2.5 V 3.0 4.0 V (V) DS Fig 7. 017aaa041 R (2) (3) (4) (5) 0.6 0.8 1.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET − (A) −4 10 (1) (2) (3) −5 10 −6 10 0.0 1.0 2 ° amb DS ...
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... V (V) GS Fig 11. Normalized drain-source on-state resistance 017aaa045 120 180 T (°C) amb Fig 13. Input, output and reverse transfer All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET 2.4 a 1.8 1.2 0.6 0.0 − DSon a = ----------------------------- DSon 25° ...
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... Product data sheet 017aaa047 0.6 0.8 Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... 0.62 1.02 0.30 0.30 0.35 0.65 0.55 0.95 0.22 0.22 REFERENCES JEDEC JEITA SC-101 All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET A 0 0.5 scale EUROPEAN PROJECTION SOT883 1 mm ISSUE DATE 03-02-05 03-04-03 © NXP B.V. 2010. All rights reserved ...
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... Product data sheet 1.3 0.7 0.25 (2×) 0.3 0.3 (2×) 0.4 0.4 (2×) All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET R0.05 (12×) 0.7 0.6 Dimensions in mm © NXP B.V. 2010. All rights reserved. solder lands solder resist solder paste occupied area sot883_fr ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002BKM v.1 20101025 2N7002BKM Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Change notice ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 25 October 2010 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 October 2010 Document identifier: 2N7002BKM ...