2N7002BKM NXP Semiconductors, 2N7002BKM Datasheet - Page 5

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

2N7002BKM

Manufacturer Part Number
2N7002BKM
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2N7002BKM
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
0
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0.75
0.33
0.05
0.02
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
2
−1
−1
Rev. 1 — 25 October 2010
1
1
60 V, 450 mA N-channel Trench MOSFET
10
10
10
10
2N7002BKM
2
2
t
t
p
p
© NXP B.V. 2010. All rights reserved.
(s)
(s)
017aaa109
017aaa110
10
10
3
3
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