BSH105 NXP Semiconductors, BSH105 Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSH105

Manufacturer Part Number
BSH105
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH105
Manufacturer:
NXPLIPS
Quantity:
99 000
Part Number:
BSH105
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
GENERAL DESCRIPTION
N-channel, enhancement mode,
logic
transistor. This device has very low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH105 is supplied in the
SOT23
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 1998
N-channel enhancement mode
MOS transistor
SYMBOL
V
V
V
I
I
P
T
SYMBOL
R
D
DM
stg
DS
DGR
GS
tot
th j-a
, T
j
level,
subminiature
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
ambient
field-effect
surface
power
PINNING
SYMBOL
PIN
1
2
3
gate
source
drain
g
CONDITIONS
R
T
T
T
T
T
CONDITIONS
FR4 board, minimum
footprint
a
a
a
a
a
GS
DESCRIPTION
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 20 k
1
d
s
QUICK REFERENCE DATA
SOT23
R
DS(ON)
TYP.
MIN.
- 55
300
-
-
-
-
-
-
-
-
V
250 m (V
GS(TO)
I
V
D
Product specification
DS
1
= 1.05 A
MAX.
0.417
MAX.
= 20 V
1.05
0.67
0.17
150
4.2
20
20
-
3
8
0.4 V
GS
Top view
2
BSH105
= 2.5 V)
Rev 1.000
UNIT
UNIT
K/W
W
W
˚C
V
V
V
A
A
A

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BSH105 Summary of contents

Page 1

... This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) ...

Page 2

... Resistive load MHz GS DS CONDITIONS ˚ 0 0.5 A; -dI /dt = 100 Product specification BSH105 MIN. TYP. MAX. UNIT 0.4 0. 150˚C 0 140 200 - 180 250 - 240 300 - 270 375 0.5 1.6 ...

Page 3

... Pulse width, tp (s) Fig.4. Transient thermal impedance f(t); parameter j-a p 4.5V 2.5V 0.5 1 1.5 Drain-Source Voltage, VDS ( f(V ); parameter 2.1 V 1.5 V 1.7 V 1.9 V 2.5 V VGS = 4 0.5 1 1.5 2 2.5 3 3.5 Drain Current f(I ); parameter V DS(ON BSH105 BSH105 D = tp/T BSH105 2.1 V VGS = 1.9 V 1.7 V 1.5 V 1 ˚ BSH105 4 4 ˚C . Rev 1.000 ...

Page 4

... 0.2 0.4 0.6 Gate-Source Voltage, VGS (V) Fig.11. Sub-threshold drain current f(V ; conditions ˚C D GS) j Capacitances, Ciss, Coss, Crss (pF) 0 Drain-Source Voltage, VDS ( iss ); conditions MHz DS GS BSH105 125 150 = BSH105 0.8 1 BSH105 Ciss Coss Crss 100 , C . oss rss Rev 1.000 ...

Page 5

... Gate charge, QG (nC) Fig.13. Typical turn-on gate-charge characteristics f August 1998 BSH105 Source-Drain Diode Current, IF (A) -5 -4.5 -4 -3.5 -3 -2.5 -2 -1 Fig.14. Typical reverse diode current f Product specification BSH105 BSH105 150 -0.2 -0.4 -0.6 -0.8 -1 Drain-Source Voltage, VSDS (V) ); conditions parameter T SDS GS -1.2 j Rev 1.000 ...

Page 6

... scale 0.48 0.15 3.0 1.4 2.5 0.45 1.9 0.95 0.38 0.09 2.8 1.2 2.1 0.15 REFERENCES IEC JEDEC EIAJ Fig.15. SOT23 surface mounting package. 6 Product specification SOT23 detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 BSH105 Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Product specification BSH105 Rev 1.000 ...

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