BSH105 NXP Semiconductors, BSH105 Datasheet - Page 2

• Manufacturer Part Number: BSH105
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1998
N-channel enhancement mode
MOS transistor
SYMBOL PARAMETER
V
V
R
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
j
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
GSS
DSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
fs
(BR)DSS
GS(TO)
DS(ON)
iss
oss
rss
SD
g(tot)
gs
gd
rr
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
V
V
V
V
V
V
V
V
I
V
V
Resistive load
V
D
GS
DS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
= 1 A; V
CONDITIONS
T
I
I
V
= 0 V; I
= V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 2.5 V; I
= 16 V; I
= 8 V; V
= 16 V; V
= 20 V; I
= 8 V; R
= 0 V; V
F
F
a
GS
= 0.5 A; V
= 0.5 A; -dI
= 25 ˚C
GS
= 0 V; V
; I
DD
D
D
DS
G
= 20 V; V
D
D
= 10 A
= 1 mA
D
D
D
D
DS
GS
= 6
= 0.6 A
= 1 A;
2
= 16 V; f = 1 MHz
= 0.6 A
= 0.6 A
= 0.3 A
= 0.6 A; T
= 0 V
= 0 V;
GS
R
F
= 16 V
/dt = 100 A/ s;
= 0 V
GS
= 4.5 V
j
= 150˚C
T
T
j
j
= 150˚C
= 150˚C
MIN.
-
-
-
-
-
MIN.
0.4
0.1
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.74
27
19
TYP. MAX. UNIT
0.57
-
-
Product specification
140
180
240
270
152
1.6
1.3
3.9
0.4
1.4
4.5
10
50
45
20
71
33
2
-
-
MAX.
1.05
4.2
200
250
300
375
100
100
1
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSH105
Rev 1.000
UNIT
m
m
m
m
nC
ns
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
A
V
V
V
V
S
A