BSH111 NXP Semiconductors, BSH111 Datasheet
BSH111
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BSH111 Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications ...
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... Figure 2 and 100 4.5 V; Figure pulsed Figure Figure pulsed Rev. 02 — 26 April 2002 BSH111 Typ Max Unit - 335 150 C 2.3 4.0 2.4 5.0 3.1 8.0 Min Max Unit - ...
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... 4 ------------------ - der Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 02 — 26 April 2002 BSH111 03aa25 150 200 50 100 100% 03aa71 100 100 (V) © ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 09629 Product data N-channel enhancement mode field-effect transistor Conditions mounted on metal clad substrate; Figure 4 minimum footprint; mounted on printed circuit board Rev. 02 — 26 April 2002 BSH111 Min Typ Max Unit - - 150 K/W - 350 - K/W 03aa69 ...
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... Figure 0 Figure MHz; Figure 250 ; - Rev. 02 — 26 April 2002 BSH111 Typ Max Unit 1.0 1 2.5 V 0.01 1 100 nA 2 7.4 2.3 4 3.1 8 380 - mS 1 ...
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... N-channel enhancement mode field-effect transistor Conditions Min I = 300 mA Figure 300 mA /dt = 100 Rev. 02 — 26 April 2002 BSH111 Typ Max Unit 0.95 1 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... 4 0.8 0 --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 26 April 2002 BSH111 03aa75 150 ( DSon 0 60 120 180 DSon © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... C ( MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 02 — 26 April 2002 BSH111 03aa89 min typ 0 1.2 0.4 0 03aa78 C iss C oss C rss ...
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... N-channel enhancement mode field-effect transistor 03aa77 ( 1 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 26 April 2002 BSH111 03ab08 0 0.2 0.4 0.6 0 (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 02 — 26 April 2002 BSH111 detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. SOT23 ...
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... Product data (9397 750 09629) Modifications • 20000807 - Product specification; initial version. 9397 750 09629 Product data N-channel enhancement mode field-effect transistor data updated. Rev. 02 — 26 April 2002 BSH111 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... Rev. 02 — 26 April 2002 Rev. 02 — 26 April 2002 BSH111 BSH111 performance. Philips Semiconductors assumes Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 April 2002 Document order number: 9397 750 09629 N-channel enhancement mode field-effect transistor BSH111 ...