BSH111 NXP Semiconductors, BSH111 Datasheet - Page 3

• Manufacturer Part Number: BSH111
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09629
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
P der
sp
der
(%)
120
I D
(A)
80
40
function of solder point temperature.
10 -1
10 -2
= 25 C; I
0
=
10
1
0
----------------------
P
1
tot 25 C
P
tot
DM
is single pulse.
50
100%
100
Limit R DSon = V DS / I D
150
T sp ( C)
03aa17
200
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
10
DC
V
I
I der
(%)
der
GS
120
80
40
function of solder point temperature.
0
=
0
4.5 V
------------------ -
I
D 25 C
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
100
V DS (V)
150
100 s
t p = 10 s
1 ms
10 ms
100 ms
BSH111
T sp ( C)
03aa25
03aa71
200
10 2
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