BSP030 NXP Semiconductors, BSP030 Datasheet - Page 10
BSP030
Manufacturer Part Number
BSP030
Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSP030.pdf
(13 pages)
Available stocks
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NXP
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10. Revision history
Table 6:
Philips Semiconductors
9397 750 07268
Product specification
Rev Date
04
03
02
01
20000726
19970313
19970120
19961111
Revision history
CPCN
HZG336
-
-
-
Description
Product specification; fourth version; supersedes BSP030_3 of 970313.
Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove).
Product specification; third version; supersedes BSP030_2 of 970120.
Product specification; second version; supersedes BSP030_1 of 961111.
Product specification; initial version.
Rev. 04 — 26 July 2000
N-channel enhancement mode field-effect transistor
© Philips Electronics N.V. 2000. All rights reserved.
BSP030
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