BSP030 NXP Semiconductors, BSP030 Datasheet - Page 4
![Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415035/sot223_3d_sml.gif)
BSP030
Manufacturer Part Number
BSP030
Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSP030.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSP030
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BSP030
Manufacturer:
NXP/恩智浦
Quantity:
20 000
7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07268
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on a metal clad substrate.
pulse duration.
Z th(j-sp)
(K/W)
10 2
10 -2
10 -1
10
1
10 -5
0.2
0.1
0.05
0.02
= 0.5
single pulse
Rev. 04 — 26 July 2000
10 -4
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
10 -3
10 -2
10 -1
© Philips Electronics N.V. 2000. All rights reserved.
P
t p
Value
15
100
1
T
t p (s)
BSP030
=
03ac21
t p
T
t
10
Unit
K/W
K/W
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