BSP225 NXP Semiconductors, BSP225 Datasheet - Page 5
![Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/41/50/415035/sot223_3d_sml.gif)
BSP225
Manufacturer Part Number
BSP225
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSP225.pdf
(12 pages)
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Philips Semiconductors
April 1995
handbook, halfpage
handbook,
P-channel enhancement mode vertical
D-MOS transistor
P tot
(W)
1.6
1.2
0.8
0.4
2
0
0
10 V
0 V
Fig.2 Switching time test circuit.
Fig.4 Power derating curve.
50
50
100
V DD = 50 V
I D
150
MBB689
T amb ( C)
MBB693
200
5
handbook, halfpage
handbook, halfpage
Fig.5 Typical output characteristics; T
INPUT
OUTPUT
(A)
I D
0.8
0.6
0.4
0.2
1
0
0
Fig.3 Input and output waveforms.
10 %
5
t on
90 %
10
V GS = 10 V
90 %
15
6 V
5 V
4 V
3 V
Product specification
t off
20
V DS (V)
BSP225
j
MDA706
MBB690
= 25 C.
10 %
25