BSP225 NXP Semiconductors, BSP225 Datasheet - Page 8
![Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/41/50/415035/sot223_3d_sml.gif)
BSP225
Manufacturer Part Number
BSP225
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSP225.pdf
(12 pages)
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Philips Semiconductors
PACKAGE OUTLINE
April 1995
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
P-channel enhancement mode vertical
D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
B
scale
1
EIAJ
8
2
c
7.3
6.7
H
E
4 mm
A
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product specification
X
ISSUE DATE
BSP225
96-11-11
97-02-28
v
A
M
A
SOT223