BSS87 NXP Semiconductors, BSS87 Datasheet - Page 3

• Manufacturer Part Number: BSS87
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum
CHARACTERISTICS
T
2001 May 18
R
V
I
I
V
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
SYMBOL
SYMBOL
j
DSS
GSS
on
off
(BR)DSS
GSth
Y
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
10
10 mm
thermal resistance from junction to ambient
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
PARAMETER
PARAMETER
I
V
V
V
I
I
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
I
V
I
V
D
D
D
D
D
D
DS
DS
GS
DS
DS
DS
GS
GS
= 250 A; V
= 1 mA; V
= 400 mA; V
= 400 mA; V
= 250 mA; V
= 250 mA; V
= 60 V; V
= 200 V; V
= 25 V; V
= 25 V; V
= 25 V; V
= 20 V; V
= 0 to 10 V
= 0 to 10 V
3
note 1
CONDITIONS
CONDITIONS
GS
GS
GS
GS
GS
GS
GS
DS
DD
DD
GS
DS
= V
= 0
= 0;
= 0;
= 0;
= 0
= 25 V
= 0
= 0
= 10 V
= 50 V;
= 50 V;
DS
200
0.8
140
MIN.
VALUE
125
0.1
1.6
750
100
20
10
6
49
TYP.
Product specification
200
60
2.8
3
120
30
15
10
60
MAX.
100
BSS87
UNIT
K/W
V
nA
nA
V
mS
pF
pF
pF
ns
ns
UNIT
A