BSS87 NXP Semiconductors, BSS87 Datasheet - Page 5

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSS87

Manufacturer Part Number
BSS87
Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS87
Manufacturer:
NXP
Quantity:
24 000
Part Number:
BSS87
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BSS87
0
Part Number:
BSS87 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS87 H6327
Quantity:
4 800
Part Number:
BSS87,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BSS87,115
Quantity:
600
Part Number:
BSS87E6327
Manufacturer:
SII
Quantity:
6 310
Part Number:
BSS87H6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSS87H6327FTSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS87H6327FTSA1
Quantity:
15 043
Part Number:
BSS87L6327
Manufacturer:
Infineon
Quantity:
500
Part Number:
BSS87Ј¬115
Manufacturer:
NXP
Quantity:
1 000
Philips Semiconductors
PACKAGE OUTLINE
2001 May 18
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
N-channel enhancement mode
vertical D-MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT89
1.6
1.4
A
0.48
0.35
b 1
0.53
0.40
b 2
w
IEC
M
1.8
1.4
b 3
0.44
0.37
1
c
b 1
e
1
TO-243
JEDEC
4.6
4.4
D
0
b 3
D
e
REFERENCES
2
2.6
2.4
E
b 2
3.0
e
SC-62
scale
EIAJ
5
2
3
1.5
e 1
B
A
E
L
4.25
3.75
H E
min.
0.8
4 mm
L
0.13
w
PROJECTION
EUROPEAN
c
H E
Product specification
ISSUE DATE
97-02-28
99-09-13
BSS87
SOT89

Related parts for BSS87