NX7002AK NXP Semiconductors, NX7002AK Datasheet
![N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology](/photos/41/52/415233/sot023_3d_sml.gif)
NX7002AK
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NX7002AK Summary of contents
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... NX7002AK 60 V, single N-channel Trench MOSFET Rev. 2 — 1 March 2012 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ...
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... Simplified outline SOT23 (TO-236AB) Description plastic surface-mounted package; 3 leads Marking code %CM All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET Graphic symbol 017aaa255 Version SOT23 [1] © NXP B.V. 2012. All rights reserved. ...
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... °C amb ° °C amb 017aaa123 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET Min - -20 [ °C - [1] = 100 °C - ≤ 10 µ [ -55 ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm NX7002AK Product data sheet Limit DSon Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET 017aaa466 (1) (2) (3) (4) (5) ( (V) DS Min Typ ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX7002AK Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET 017aaa467 (s) p 017aaa468 (s) p © ...
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... Ω °C G(ext 115 mA ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET Min Typ Max 1.1 1.6 2 ...
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... V (V) DS Fig 7. 017aaa471 3 DSon (Ω) 3.5 V 4 0.15 0.20 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET - (1) (2) ( ° ...
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... Fig 11. Normalized drain-source on-state resistance as 017aaa475 (pF) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET 2.0 a 1.5 1.0 0 function of junction temperature; typical ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions 0. (A) 0.15 (1) 0.10 0. 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa478 (2) 1 ...
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... Fig 18. Package outline SOT23 (TO-236AB) NX7002AK Product data sheet P duty cycle δ 3.0 2.8 3 2.5 1.4 2.1 1.2 1 1.9 Dimensions in mm All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET 006aaa812 1.1 0.9 0.45 0.15 2 0.48 0.15 0.38 0.09 04-11-04 © NXP B.V. 2012. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area Dimensions in mm ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX7002AK v.2 20120301 • Modifications: 1.2 “Features and • 8 “Test • 12 “Legal NX7002AK v.1 20120223 NX7002AK Product data sheet Data sheet status Product data sheet benefits”: corrected information”: corrected information”: updated Product data sheet All information provided in this document is subject to legal disclaimers ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 March 2012 NX7002AK 60 V, single N-channel Trench MOSFET © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX7002AK All rights reserved. Date of release: 1 March 2012 Document identifier: NX7002AK ...