NX7002AK NXP Semiconductors, NX7002AK Datasheet - Page 8

• Manufacturer Part Number: NX7002AK
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX7002AK
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
0.20
0.15
0.10
0.05
D
.1.5
2.5
2.0
1.0
0.5
0
0
-60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
1
× R
0
(2)
DSon
DS
2
= V
(1)
60
(1)
(2)
(3)
(1)
GS
3
(2)
120
All information provided in this document is subject to legal disclaimers.
4
017aaa473
017aaa475
T
V
j
GS
(°C)
(V)
180
5
Rev. 2 — 1 March 2012
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
2.0
1.5
1.0
0.5
10
-1
0
1
2
10
-60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
-1
iss
oss
rss
60 V, single N-channel Trench MOSFET
0
GS
1
= 0 V
60
NX7002AK
10
120
V
© NXP B.V. 2012. All rights reserved.
(1)
(2)
(3)
DS
017aaa474
T
017aaa476
j
(V)
(°C)
180
10
2
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