PHC2300 NXP Semiconductors, PHC2300 Datasheet - Page 6
![One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package](/photos/41/50/415041/sot096-1_3d_sml.gif)
PHC2300
Manufacturer Part Number
PHC2300
Description
One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package
Manufacturer
NXP Semiconductors
Datasheet
1.PHC2300.pdf
(14 pages)
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Quantity
Price
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Part Number:
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Part Number:
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NXP Semiconductors
Table 6.
PHC2300
Product data sheet
Symbol
C
t
t
on
off
Fig 5.
rss
(mA)
1200
800
400
I
D
0
function of drain-source voltage; N-channel;
typical values
T
Output characteristics: drain current as a
0
amb
Characteristics
= 25 °C; t
V
Parameter
reverse transfer
capacitance
turn-on time
turn-off time
GS
= 10 V
4
p
= 80 μs; δ = 0.
…continued
5 V
4 V
3.5 V
8
V
Conditions
V
T
V
T
V
T
V
T
V
I
V
I
All information provided in this document is subject to legal disclaimers.
D
D
DS
j
j
j
j
DS
DS
DS
DS
DS
DS
= 25 °C; N-channel
= 25 °C; P-channel
= 25 °C; N-channel
= 25 °C; P-channel
= 170 mA; N-channel
= -115 mA; P-channel
3 V
2.5 V
2 V
(V)
mld841
= 50 V; V
= -50 V; V
= 50 V; V
= -50 V; V
= 50 V; V
= -50 V; V
Rev. 05 — 24 February 2011
12
GS
GS
GS
GS
GS
GS
= 0 V; f = 1 MHz;
= 10 V; I
= 10 V; T
= -10 V; I
= 0 V; f = 1 MHz;
= -10 V; T
Complementary enhancement mode MOS transistors
Fig 6.
D
j
−800
(mA)
−600
−400
−200
D
= 25 °C;
= 170 mA;
j
I
D
= -115 mA;
= 25 °C;
0
function of drain-source voltage; P-channel;
typical values
T
Output characteristics: drain current as a
0
amb
= 25 °C; t
−2
−4
p
= 80 μs; δ = 0.
Min
-
-
-
-
-
-
−6
−8
Typ
7.3
3
7
4
53
25
V
PHC2300
GS
© NXP B.V. 2011. All rights reserved.
−10
= −10 V
−4.5 V
−4.0 V
−3.5 V
−3.0 V
−2.5 V
−2.0 V
V
mbh441
Max
-
-
12
10
65
35
DS
(V)
−12
Unit
pF
pF
ns
ns
ns
ns
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