PHC2300 NXP Semiconductors, PHC2300 Datasheet - Page 8

• Manufacturer Part Number: PHC2300
• Description: One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHC2300
Product data sheet
Fig 11. Gate-source voltage and drain-source voltage
Fig 13. Drain-source on-state resistance as a function
R
DSon
(Ω)
V
(V)
GS
10
12
10
8
4
0
1
2
as a function of gate charge; P-channel typical
values
of gate-source voltage; N-channel typical
values
V
(1) V
(2) V
V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
DS
DS
D
D
D
D
D
= -50 V; I
≥ I
DS
GS
= 10 mA.
= 20 mA.
= 50 mA.
= 100 mA.
= 200 mA.
(1)
D
2
X R
535
DSon
D
(1)
(2)
(3)
(4)
(5)
= -115 mA; T
4
; T
1070
amb
(2)
= 25 °C; t
6
amb
1605
= 25 °C.
All information provided in this document is subject to legal disclaimers.
8
Q
p
V
G
= 300 μs; δ = 0.
GS
(pC)
mld845
mld846
(V)
Rev. 05 — 24 February 2011
2140
10
50
37.5
25
12.5
0
V
(V)
DS
Complementary enhancement mode MOS transistors
Fig 12. Source current as a function of source-drain
Fig 14. Drain-source on-state resistance as a function
R
DSon
(Ω)
−0.5
−0.4
−0.3
−0.2
−0.1
I
(A)
10
SD
10
0
1
2
voltage; P-channel typical values
of gate-source voltage; P-channel typical
values
V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
DS
D
D
D
D
D
≥ I
= -10 mA.
= -20 mA.
= -50 mA.
= -100 mA.
= -200 mA.
D
−2
X R
−0.4
DSon
(1)
(2)
(3)
(4)
(5)
−4
; T
amb
= 25 °C; t
−6
−0.8
PHC2300
V
© NXP B.V. 2011. All rights reserved.
−8
SD
p
V
= 300 μs; δ = 0.
(V)
GS
mda233
mda239
(V)
−1.2
−10
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