PHK13N03LT NXP Semiconductors, PHK13N03LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHK13N03LT

Manufacturer Part Number
PHK13N03LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHK13N03LT
Manufacturer:
NXP
Quantity:
51 000
Part Number:
PHK13N03LT
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PHK13N03LT
Quantity:
500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
Simple gate drive required due to low
gate charge
DC-to-DC convertors
Lithium-ion battery applications
PHK13N03LT
N-channel TrenchMOS logic level FET
Rev. 02 — 17 March 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
see
j
sp
sp
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; V
= 25 °C; see
Figure
Figure 11
Figure 10
= 15 V; T
= 5 V; I
= 10 V; I
1; see
D
j
D
≤ 150 °C
= 8 A;
j
GS
= 25 °C;
= 8 A;
Figure
Figure 2
= 10 V;
Figure 3
9;
Suitable for high frequency
applications due to fast switching
characteristics
Notebook computers
Portable equipment
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
3.9
17
Max
30
13.8
6.25
-
20
Unit
V
A
W
nC
mΩ

Related parts for PHK13N03LT

PHK13N03LT Summary of contents

Page 1

... PHK13N03LT N-channel TrenchMOS logic level FET Rev. 02 — 17 March 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... °C; t Figure °C; see Figure °C sp ≤ 10 µs; pulsed ° Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 4 Version SOT96-1 Min Max - - ...

Page 3

... T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature = Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET 03aa17 0 50 100 150 T (°C) sp 003aaa487 = 10 μ 100 (V) DS © ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration PHK13N03LT_2 Product data sheet Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board −2 − Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET Min Typ Max - - 003aaa324 t p δ ...

Page 5

... I = 1.5 A G(ext ° see Figure /dt = -100 A/µ ° Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET Min Typ Max 0 2 ...

Page 6

... V GS(th) (V) 2 1 -60 V (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET 003aaa326 × > DSon Tj = 150 °C 25 ° (V) GS 03aa33 max typ min 0 ...

Page 7

... C (pF (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET 03aa27 0 60 120 ( ° 003aaa328 C iss C oss C rss − ...

Page 8

... Fig 13. Source current as a function of source-drain voltage; typical values PHK13N03LT_2 Product data sheet ( °C 150 ° 0.2 0.4 0.6 0.8 Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET 003aaa329 1 V (V) SD © NXP B.V. 2009. All rights reserved ...

Page 9

... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 ...

Page 10

... Legal texts have been adapted to the new company name where appropriate. PHK13N03LT-01 20030623 PHK13N03LT_2 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 17 March 2009 PHK13N03LT Supersedes PHK13N03LT-01 - © NXP B.V. 2009. All rights reserved ...

Page 11

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 17 March 2009 PHK13N03LT N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PHK13N03LT_2 All rights reserved. Date of release: 17 March 2009 ...

Related keywords