PHK13N03LT NXP Semiconductors, PHK13N03LT Datasheet - Page 5
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415041/sot096-1_3d_sml.gif)
PHK13N03LT
Manufacturer Part Number
PHK13N03LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PHK13N03LT.pdf
(12 pages)
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NXP Semiconductors
6. Characteristics
Table 6.
PHK13N03LT_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
I
T
V
T
V
R
V
R
V
R
I
see
I
V
D
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
DS
G(ext)
DS
G(ext)
DS
= 250 µA; V
= 250 µA; V
= 250 µA; V
= 250 µA; V
= 250 µA; V
= 8 A; V
= 25 °C; see
= 25 °C; see
= 7 A; V
= 7 A; dI
Figure 8
Figure 8
Figure 8
Figure 9
Figure
Figure
Figure 13
= 24 V; V
= 24 V; V
= 15 V; V
= 15 V; R
= 15 V; R
= 15 V; R
= 30 V; T
= 20 V; V
= -20 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 6 Ω; T
= 6 Ω; I
= 6 Ω; T
GS
DS
S
10; see
9; see
/dt = -100 A/µs; V
Rev. 02 — 17 March 2009
D
D
D
= 15 V; V
= 0 V; T
j
GS
GS
GS
DS
L
L
L
GS
GS
DS
DS
DS
D
DS
= 25 °C
= 8 A; T
= 8 A; T
j
j
= 7 A; T
Figure 11
Figure 12
= 10 Ω; V
= 10 Ω; V
= 10 Ω; V
= 25 °C; I
= 25 °C; I
= 1.5 A; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= V
= V
= V
= 0 V; T
= 0 V; T
= 0 V; T
Figure 10
Figure 9
GS
GS
GS
j
= 25 °C;
j
j
GS
; T
; T
; T
j
= 150 °C;
= 25 °C;
= 25 °C;
j
j
j
GS
GS
GS
j
j
j
D
D
= 25 °C
= 100 °C
= 25 °C
j
j
j
= 5 V;
j
= 25 °C
= -55 °C
= 25 °C
= 150 °C;
= -55 °C;
= 25 °C;
= 25 °C
= 1.5 A
= 1.5 A
= 10 V;
= 10 V;
= 10 V;
GS
= 0 V;
N-channel TrenchMOS logic level FET
Min
30
27
0.5
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PHK13N03LT
Typ
-
-
-
-
1.5
-
-
-
-
21
-
17
10.7
2.7
3.9
752
200
130
6
7
23
11
0.86
25
5
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
2.2
2
1
5
100
100
26
33
20
-
-
-
-
-
-
-
-
-
-
1.1
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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