PHK31NQ03LT NXP Semiconductors, PHK31NQ03LT Datasheet
PHK31NQ03LT
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PHK31NQ03LT Summary of contents
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... PHK31NQ03LT N-channel TrenchMOS logic level FET Rev. 3 — 11 March 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... SOT96-1 (SO8) Description plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT96-1 © NXP B.V. 2011. All rights reserved. ...
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... T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET Min - = 20 kΩ -20 Figure 1; - Figure 1 - ≤ 10 µs; ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PHK31NQ03LT Product data sheet / Conditions - All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET 003aaa690 10 μ 100 μ 100 (V) DS ...
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... MHz °C; see Figure 0.5 Ω 4 5.6 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET Min Typ Max 1.3 1.7 2.15 0 2.6 ...
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... V (V) = 2.4 GS 0.6 0.8 V (V) DS Fig 6. 003aaa698 C iss V C rss 10 V (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET Min Typ - 0. ( °C = 150 °C T ...
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... Fig 10. Normalized drain-source on-state resistance 003aaa694 3.2 3.4 4 (A) D Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET 2 a 1.6 1.2 0.8 0.4 0 − factor as a function of junction temperature GS(pl) ...
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... 150 ° 0.4 0 All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET MHz function of drain-source voltage; typical values 003aaa696 = 25 ° ...
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... REFERENCES JEDEC JEITA MS-012 All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET θ detail ...
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... Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET Supersedes PHK31NQ03LT v.2 PHK31NQ03LT v.1 © NXP B.V. 2011. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 11 March 2011 PHK31NQ03LT N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 11 March 2011 Document identifier: PHK31NQ03LT ...