PHK31NQ03LT NXP Semiconductors, PHK31NQ03LT Datasheet - Page 4

• Manufacturer Part Number: PHK31NQ03LT
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHK31NQ03LT
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-sp)
Z
(K/W)
th(j-sp)
(A)
I
10
D
10
10
10
10
10
10
10
-1
-1
-2
3
2
1
2
1
10
10
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to solder point as a function of pulse duration
-1
-5
sp
Thermal characteristics
0.2
0.1
0.05
0.02
δ = 0.5
= 25 °C; I
Parameter
thermal resistance from
junction to solder point
single pulse
DM
Limit R
10
is single pulse
-4
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
1
-3
Conditions
Rev. 3 — 11 March 2011
DC
10
-2
10
10
N-channel TrenchMOS logic level FET
-1
PHK31NQ03LT
Min
-
V
P
1
DS
t
100 μ s
1 ms
10 ms
100 ms
p
(V)
=
10 μ s
t
Typ
-
p
t
p
T
(s)
© NXP B.V. 2011. All rights reserved.
003aaa691
003aaa690
δ =
Max
18
T
t
p
t
10
10
2
Unit
K/W
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