PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 3

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
PMDPB65UP
Product data sheet
Symbol
Per device
T
T
T
Source-drain diode
I
ESD maximum rating
V
S
Fig 1.
j
amb
stg
ESD
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
P
(%)
der
120
80
40
0
−75
function of ambient temperature
Normalized total power dissipation as a
Limiting values
Parameter
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
−25
25
…continued
75
125
All information provided in this document is subject to legal disclaimers.
T
017aaa001
amb
(°C)
175
Conditions
T
HBM; C = 100 pF; R = 1.5 kΩ
Rev. 2 — 8 March 2011
amb
= 25 °C
Fig 2.
(%)
I
der
120
80
40
0
−75
function of ambient temperature
Normalized continuous drain current as a
20 V, 3.5 A dual P-channel Trench MOSFET
−25
25
[1]
[3]
PMDPB65UP
75
Min
-
-55
-65
-
-
125
© NXP B.V. 2011. All rights reserved.
T
017aaa002
amb
2
150
Max
150
150
-1.4
1000
.
(°C)
175
Unit
°C
°C
°C
A
V
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