PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 7

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDPB65UP
Product data sheet
Fig 6.
Fig 8.
R
−10.0
(Ω)
(A)
Dson
I
−8.0
−6.0
−4.0
−2.0
0.20
0.15
0.10
0.05
D
0.0
0.0
−1.0
0.0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
amb
amb
GS
GS
GS
GS
GS
GS
= 25 °C
= 25 °C
−2.0
= −1.5 V
= −1.6 V
= −1.8 V
= −2 V
= −2.5 V
= −4.5 V
−1.0
V
GS
−3.0
= −3.0 V
(1)
−2.4 V
−2.2 V
−2.0
−4.0
(2)
−3.0
−5.0
All information provided in this document is subject to legal disclaimers.
V
017aaa069
017aaa071
−2.0 V
−1.8 V
−1.6 V
−1.4 V
DS
I
D
(V)
(A)
(3)
(4)
(5)
(6)
−4.0
−6.0
Rev. 2 — 8 March 2011
Fig 7.
Fig 9.
R
−10
−10
−10
DSon
(Ω)
(A)
I
D
0.20
0.15
0.10
0.05
0.0
−3
−4
−5
0.0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
D
20 V, 3.5 A dual P-channel Trench MOSFET
amb
= −1 A
amb
amb
= 25 °C; V
= 150 °C
= 25 °C
−0.4
−2.0
(1)
DS
= −5 V
PMDPB65UP
(2)
−0.8
−4.0
V
V
© NXP B.V. 2011. All rights reserved.
GS
GS
017aaa070
017aaa072
(3)
(V)
(V)
(1)
(2)
−1.2
−6.0
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