PMF3800SN NXP Semiconductors, PMF3800SN Datasheet - Page 6

• Manufacturer Part Number: PMF3800SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMF3800SN_3
Product data sheet
Fig 5.
Fig 7.
V
(A)
GS(th)
(V)
I
D
0.5
0.4
0.3
0.2
0.1
0
4
3
2
1
0
function of drain-source voltage; typical values
-60
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
T
j
= 25 °C
0.5
0
V
GS
max
min
1.0
typ
60
(V) = 10
120
1.5
6.0
V
T
DS
j
03aa34
(°C)
03an70
(V)
4.5
4.0
3.5
3.0
Rev. 03 — 11 November 2009
180
2.0
Fig 6.
Fig 8.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
0.5
0.4
0.3
0.2
0.1
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
N-channel TrenchMOS standard level FET
DS
> I
D
× R
0.6
DSon
150 °C
2
min
1.2
T
PMF3800SN
j
= 25 °C
4
1.8
V
© NXP B.V. 2009. All rights reserved.
GS
V
GS
typ
(V)
03aa37
03an72
(V)
2.4
6
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