PMF3800SN NXP Semiconductors, PMF3800SN Datasheet - Page 7

• Manufacturer Part Number: PMF3800SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMF3800SN_3
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
V
DSon
(Ω)
(V)
GS
10
15
10
8
6
4
2
0
5
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
V
GS
(V) = 3.5
0.1
0.3
0.2
0.6
4.0
0.3
0.9
T
4.5
0.4
j
= 25 °C
Q
G
I
D
(nC)
03an71
03ab09
(A)
6.0
10
Rev. 03 — 11 November 2009
0.5
1.2
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
a
10
2.4
1.8
1.2
0.6
10
0
1
2
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
N-channel TrenchMOS standard level FET
0
1
60
PMF3800SN
10
120
V
© NXP B.V. 2009. All rights reserved.
DS
T
j
(V)
(°C)
03aa28
03aa46
C
C
C
oss
iss
rss
180
10
2
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