PMGD280UN NXP Semiconductors, PMGD280UN Datasheet - Page 7

• Manufacturer Part Number: PMGD280UN
• Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12763
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
0.8
0.6
0.4
0.2
= 0.25 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
min
typ
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03aj65
Rev. 01 — 10 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
Dual N-channel TrenchMOS™ ultra low level FET
10
(A)
I D
T
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an06
DS
10 2
= 5 V
0.2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
min
0.4
PMGD280UN
0.6
typ
V GS (V)
03am43
0.8
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