PMGD280UN NXP Semiconductors, PMGD280UN Datasheet - Page 8

• Manufacturer Part Number: PMGD280UN
• Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12763
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
150 C
0.5
GS
= 0 V
T j = 25 C
1
V SD (V)
03an05
Rev. 01 — 10 February 2004
1.5
Fig 13. Gate-source voltage as a function of gate
Dual N-channel TrenchMOS™ ultra low level FET
I
V GS
D
(V)
= 1 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 10 V
DD
0.2
= 10 V
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMGD280UN
0.6
0.8
Q G (nC)
03an07
1
8 of 12