PMN25UN NXP Semiconductors, PMN25UN Datasheet
PMN25UN
Related parts for PMN25UN
PMN25UN Summary of contents
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... PMN25UN N-channel Trench MOSFET Rev. 1 — 28 July 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ...
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... Type number PMN25UN PMN25UN Product data sheet Description plastic surface-mounted package (TSOP6); 6 leads Marking code T6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET Version SOT457 © NXP B.V. 2011. All rights reserved ...
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... °C amb ° °C amb 017aaa123 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET Min - -8 [ °C - [1] = 100 °C - ≤ 10 µ [ -55 ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm PMN25UN Product data sheet / Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET 017aaa290 (1) (2) (3) (4) (5) ( ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN25UN Product data sheet – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET 017aaa203 (s) p 017aaa204 2 10 ...
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... 4 G(ext ° 1 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET Min Typ Max 0.4 0 100 - ...
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... R DSon (mΩ) 150 100 (4) (5) (6) ( (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET –3 –4 (1) (2) –5 –6 0.0 0.2 0.4 0 ° (1) minimum values (2) typical values ...
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... C (pF 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET – 120 a function of junction temperature; typical values 3 (1) (2) 2 (3) -1 ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions ( 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 ...
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... Fig 17. Duty cycle definition PMN25UN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2.5 0.2 REFERENCES JEDEC JEITA SC-74 All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET detail 0.33 0.2 0.2 0.1 0.23 EUROPEAN PROJECTION SOT457 ...
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... Product data sheet 3.45 1.95 0.45 (6×) 0.7 (6×) 0.8 (6×) 2.4 5.3 1.45 (6×) 2.85 All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET 0.55 solder lands (6×) solder resist solder paste occupied area Dimensions in mm sot457_fr 1.5 (4×) solder lands solder resist 0.45 (2×) ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMN25UN v.1 20110728 PMN25UN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 28 July 2011 PMN25UN N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMN25UN All rights reserved. Date of release: 28 July 2011 Document identifier: PMN25UN ...