PMN25UN NXP Semiconductors, PMN25UN Datasheet - Page 4

• Manufacturer Part Number: PMN25UN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMN25UN
Product data sheet
Symbol
R
R
Fig 3.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
(A)
I
10
10
D
10
10
10
–1
–2
1
2
–1
voltage
I
(1) t
(2) t
(3) t
(4) t
(5) DC; T
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
Thermal characteristics
= single pulse
p
p
p
p
= 100 µs
= 1 ms
= 10 ms
= 100 ms
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
sp
amb
= 25 °C
Limit R
= 25 °C; drain mounting pad 6 cm
DSon
= V
DS
/I
D
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
1
Rev. 1 — 28 July 2011
2
10
20 V, 6 A N-channel Trench MOSFET
[1]
[2]
2
.
(1)
(2)
(3)
(4)
(5)
(6)
Min
-
-
-
V
DS
(V)
Typ
204
82
17
PMN25UN
© NXP B.V. 2011. All rights reserved.
017aaa290
Max
235
94
20
10
2
Unit
K/W
K/W
K/W
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