PMN34LN NXP Semiconductors, PMN34LN Datasheet - Page 3

• Manufacturer Part Number: PMN34LN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10938
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P der
P
(A)
I D
(%)
10 -1
10 -2
10 2
sp
120
der
80
40
10
1
0
function of solder point temperature.
= 25 C; I
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
Limit R DSon = V DS / I D
50
is single pulse; V
100%
100
GS
= 10 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 21 March 2003
DC
Fig 2. Normalized continuous drain current as a
I der
(%)
I
120
der
80
40
0
function of solder point temperature.
0
=
-------------------
I
D 25 C
10
I
D
50
100%
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
t p = 10 s
100 s
1 ms
10 ms
100 ms
100
V DS (V)
PMN34LN
150
T sp ( C)
03al58
03aa25
10 2
200
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