PMN34LN NXP Semiconductors, PMN34LN Datasheet - Page 6

• Manufacturer Part Number: PMN34LN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10938
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
j
j
(A)
I D
= 25 C
90
60
30
= 25 C
10
0
8
6
4
2
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
2
0.2
10 V
4.5 V
4
0.4
3.3 V
V GS = 2.7 V
6
0.6
V GS = 1.9 V
8
V DS (V)
I D (A)
03al59
03al60
2.9 V
3.3 V
4.5 V
2.9 V
2.7 V
2.5 V
2.3 V
2.1 V
10 V
0.8
10
Rev. 01 — 21 March 2003
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
a
(A)
j
I D
1.5
0.5
= 25 C and 150 C; V
10
=
8
6
4
2
0
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D X R DSon
R
DSon
0
1
T j = 25 C
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
60
I
D
R
2
DSon
150 C
PMN34LN
120
V GS (V)
T j ( C)
03al63
03af18
180
3
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