PMN34UP NXP Semiconductors, PMN34UP Datasheet

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... PMN34UP P-channel Trench MOSFET Rev. 1 — 9 May 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1  Very fast switching 1.3 Applications  ...

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... GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET Version SOT457 Min Max - - [ [1] - -3.1 ≤ 10 µs ...

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... PMN34UP Product data sheet 017aaa123 75 125 175 T (°C) j Fig 2. –1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET 120 I der (%) −75 − Normalized continuous drain current as a function of junction temperature ...

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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN34UP Product data sheet Conditions in free air – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET Min Typ Max [1] - 200 230 [ ...

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... G(ext ° -2 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET Min Typ Max - -0.45 -0.7 -0. - -100 - 34 40 ...

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... Sub-threshold drain current as a function of gate-source voltage 0.20 DSon (Ω) 0.15 0.10 0.05 0.00 0.0 –1.0 –2.0 – 150 ° °C j Drain-source on-state resistance as a function of gate-source voltage; typical values PMN34UP 017aaa143 (3) –0.8 –1.0 V (V) GS 017aaa145 (1) (2) –4.0 –5.0 V (V) GS © NXP B.V. 2011. All rights reserved ...

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... C (pF 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET – 120 a function of junction temperature; typical values 4 (1) 3 (2) 2 (3) ...

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... Fig 15. Gate charge waveform definitions – (A) –12 (1) –8 –4 –0 –0.2 –0.4 –0.6 –0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 Q ...

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... Fig 17. Duty cycle definition PMN34UP Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

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... scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2.5 0.2 REFERENCES JEDEC JEITA SC-74 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET detail 0.33 0.2 0.2 0.1 0.23 EUROPEAN PROJECTION SOT457 ...

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... Product data sheet 3.45 1.95 0.45 (6×) 0.7 (6×) 0.8 (6×) 2.4 5.3 1.45 (6×) 2.85 All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET 0.55 solder lands (6×) solder resist solder paste occupied area Dimensions in mm sot457_fr 1.5 (4×) solder lands solder resist 0.45 (2×) ...

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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMN34UP v.1 20110509 PMN34UP Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET ...

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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 9 May 2011 PMN34UP P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...

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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMN34UP All rights reserved. Date of release: 9 May 2011 Document identifier: PMN34UP ...