PMN34UP NXP Semiconductors, PMN34UP Datasheet - Page 2

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMN34UP

Manufacturer Part Number
PMN34UP
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMN34UP
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMN34UP
Product data sheet
Type number
PMN34UP
Type number
PMN34UP
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
Package
Name
TSOP6
Description
plastic surface-mounted package (TSOP6); 6 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 9 May 2011
= 25 °C
= 25 °C
= -4.5 V; T
= -4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
ZY
amb
amb
= 25 °C
= 100 °C
p
≤ 10 µs
20 V, 5 A P-channel Trench MOSFET
[1]
[1]
[2]
[1]
[1]
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
-
PMN34UP
© NXP B.V. 2011. All rights reserved.
2
SOT457
150
150
Version
Max
-20
8
-5
-3.1
-20
540
1385
6250
150
-1.5
.
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
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