PMV56XN NXP Semiconductors, PMV56XN Datasheet
PMV56XN
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PMV56XN Summary of contents
Page 1
... Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) PMV56XN TrenchMOS™ extremely low level FET Rev. 02 — 24 June 2004 TrenchMOS™ technology Low threshold voltage Battery management High-speed switch Low power DC-to-DC converter ...
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... 4 4 pulsed Figure Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET Min - - Figure 2 and 3 - Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Product data 03aa17 I (%) 150 200 der Fig 2. Normalized continuous drain current 4 Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET 120 der 100 150 ------------------- 100 function of solder point temperature. ...
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... C sp Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 13495 Product data TrenchMOS™ extremely low level FET Conditions Figure Rev. 02 — 24 June 2004 PMV56XN Min Typ Max Unit - - 65 K/W 03ap05 ...
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... 2 3.1 A; Figure 7 and 4 3 MHz Figure Rev. 02 — 24 June 2004 PMV56XN Min Typ Max 0. 0.01 1 100 115 Figure ...
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... V DS (V) T Fig 6. Transfer characteristics: drain current as a 03ae94 2 4 (A) Fig 8. Normalized drain-source on-state resistance Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET > DSon ( 150 C 0 ...
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... T j (º Fig 10. Sub-threshold drain current as a function (pF Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET min typ 0 0 gate-source voltage. 03ae98 C iss C oss C rss (V) © ...
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... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET 3 ˚ (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ TO-236AB Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Updated to latest standards. Section 1.4 “Quick reference data” Section 4 “Limiting values” Section 4 “Limiting values” Figure 3 Section 5 “Thermal characteristics” Figure 4 Rev. 02 — 24 June 2004 PMV56XN TrenchMOS™ extremely low level FET I and P increased. D tot , P and I increased. tot S modifi ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 02 — 24 June 2004 Rev. 02 — 24 June 2004 PMV56XN PMV56XN TrenchMOS™ extremely low level FET TrenchMOS™ extremely low level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 June 2004 Document order number: 9397 750 13495 PMV56XN TrenchMOS™ extremely low level FET ...