PMV56XN NXP Semiconductors, PMV56XN Datasheet - Page 2

• Manufacturer Part Number: PMV56XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 13495
Product data
Type number
PMV56XN
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
D
DM
S
stg
j
DS
GS
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
Ordering information
Limiting values
Package
Name
SOT23
Description
Plastic surface mounted package; 3 leads
Conditions
25 C
T
T
T
T
sp
sp
sp
sp
sp
Rev. 02 — 24 June 2004
= 25 C; V
= 70 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
T
j
150 C
Figure 1
GS
GS
= 4.5 V;
= 4.5 V;
p
10 s;
Figure 2
Figure 2
TrenchMOS™ extremely low level FET
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
65
65
PMV56XN
Max
20
3.76
3
15
1.92
+150
+150
1.6
8
Version
SOT23
2 of 12
Unit
V
V
A
A
A
W
A
C
C