PSMN025-100D NXP Semiconductors, PSMN025-100D Datasheet
PSMN025-100D
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PSMN025-100D Summary of contents
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... PSMN025-100D N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 — 12 January 2012 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Graphic symbol mbb076 Version SOT428 © NXP B.V. 2012. All rights reserved ...
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... GS lma016 100 100 125 150 175 Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Min - ≥ 25 ° kΩ -20 = 100 °C; see Figure °C; see Figure 1; - Figure 4 - Figure 2 - -55 ...
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... Maximum Avalanche Current, I (A) AS 100 10 Tj prior to avalanche = 150 C 1 0.001 0.01 0.1 Avalanche time All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D lma029 (ms) =10 μ 100 μ 100 (V) DS 003aah007 3 10 © ...
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... Figure 5 SOT428 package ; printed-circuit board mounted ; minimum footprint Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.001 1E-06 1E-05 1E-04 1E-03 Pulse width, tp (s) All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Min Typ - - - 50 lma018 tp 1E-02 1E-01 1E+00 Max Unit 1 K/W - K/W © NXP B.V. 2012. All rights reserved. ...
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... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Min Typ Max 100 - - 0. 500 - 0 ...
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... 0 -60 -40 -20 Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Transconductance, gfs (S) VDS > RDS(ON Drain current, ID (A) Forward transconductance as a function of drain current; typical values ...
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... VGS = 10V Fig 13. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Normalised On-state Resistance -60 -40 - Junction temperature, Tj (C) factor as a function of junction temperature Gate-source voltage, VGS (V) ...
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... Crss 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig 15. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D 175 1.1 1.2 1.3 1.4 1.5 Source-Drain Voltage, VSDS (V) © NXP B.V. 2012. All rights reserved. lma028 ...
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... min min 5.46 0.56 6.22 6.73 4.45 4.0 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D min 10.4 2.95 0.5 2.285 4.57 9.6 2.55 EUROPEAN PROJECTION SOT428 max 0.9 ...
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... Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Supersedes PSMN025-100D v.3 PSMN025-100D v.2 © NXP B.V. 2012. All rights reserved ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D © NXP B.V. 2012. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 12 January 2012 PSMN025-100D Trademarks © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 January 2012 Document identifier: PSMN025-100D ...